Session 5: IGBT & IC Technologies
Combines advantages of BJT and MOSFET
Layers: Emitter (N+ Layer) → Base (P-Layer) → Collector (N+ Layer) → Gate (Insulated)
Terminals: Emitter (E), Gate (G), Collector (C)
Off State: V_GE < V_th - Only small leakage current flows
On State: V_GE > V_th - Large current flows from collector to emitter
Saturation: Fully on with minimal voltage drop
Process continuous signals
Process discrete binary signals
Combine analog and digital functions
| Feature | BJT | MOSFET | IGBT |
|---|---|---|---|
| Control Type | Current | Voltage | Voltage |
| Switching Speed | Slow | Very Fast | Fast |
| Voltage Rating | Low-Medium | Medium | Very High |
| Current Capability | Medium | Medium | Very High |
| On-State Loss | Low | Very Low | Low |
| Best EV Use | Signal circuits | DC-DC converters | Motor inverters |
* Highlighted cells indicate best-in-class performance for EV power electronics